AUIRF7342QTR

Teknik Özellikler

Transistor Application

SWITCHING

Number Of Elements

2

Pin Sayısı

8

Turn On Delay Time

14 ns

Parça Durumu

Not For New Designs

Drain To Source Breakdown Voltage

-55V

Rise Time

10ns

Ambalaj

Tape & Reel (TR)

Element Configuration

Dual

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fall Time Typ

22 ns

Terminal Sayısı

8

Avalanche Energy Rating Eas

114 mJ

Max Power Dissipation

2W

Rds On Max Id Vgs

105m Ω @ 3.4A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Threshold Voltage

-1V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Continuous Drain Current Id

3.4A

Fet Feature

Logic Level Gate

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

690pF @ 25V

Power Dissipation

2W

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Montaj

Surface Mount

Genişlik

4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3V @ 250μA

Gate Charge Qg Max Vgs

38nC @ 10V

Fabrika Tedarik Süresi

10 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

20V

Seri

Automotive, AEC-Q101, HEXFET®

Drainsource On Resistancemax

0.105Ohm

Terminal Formu

GULL WING

Fet Type

2 P-Channel (Dual)