AUIRF7341QTR

Teknik Özellikler

Fet Feature

Logic Level Gate

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

780pF @ 25V

Power Dissipation

2.4W

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Montaj

Surface Mount

Genişlik

4mm

Fabrika Tedarik Süresi

10 Weeks

Gate Charge Qg Max Vgs

44nC @ 10V

Vgsth Max Id

3V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

Automotive, AEC-Q101, HEXFET®

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.05Ohm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

1.5mm

Fet Type

2 N-Channel (Dual)

Uzunluk

5mm

Drain To Source Voltage Vdss

55V

Yayın Yılı

2011

Turn Off Delay Time

31 ns

Transistor Application

SWITCHING

Number Of Elements

2

Pin Sayısı

8

Parça Durumu

Not For New Designs

Turn On Delay Time

9.2 ns

Drain To Source Breakdown Voltage

55V

Ambalaj

Tape & Reel (TR)

Rise Time

7.7ns

Element Configuration

Dual

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Fall Time Typ

12.5 ns

Avalanche Energy Rating Eas

140 mJ

Max Power Dissipation

2.4W

Rds On Max Id Vgs

50m Ω @ 5.1A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ