AUIRF7319QTR

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn)

Uzunluk

5mm

Yayın Yılı

2011

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Formu

GULL WING

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

1.5mm

Fet Type

N and P-Channel

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

6.5A

Genişlik

4mm

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

33nC @ 10V

Vgsth Max Id

3V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Reach Svhc

No SVHC

Nominal Vgs

1 V

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

650pF @ 25V

Power Dissipation

2W

RoHS Durumu

ROHS3 Compliant

Fet Feature

Logic Level Gate

Continuous Drain Current Id

4.9A

Threshold Voltage

1V

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

29m Ω @ 5.8A, 10V

Max Power Dissipation

2W

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Currentmax Idm

30A

Ambalaj

Tape & Reel (TR)

Element Configuration

Dual

Current Continuous Drain Id25

6.5A 4.9A