AUIRF7316QTR

Teknik Özellikler

Rds On Max Id Vgs

58m Ω @ 4.9A, 10V

Max Power Dissipation

2W

Avalanche Energy Rating Eas

140 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Fall Time Typ

32 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Currentmax Idm

30A

Continuous Drain Current Id

-4.9A

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

-1V

Radyasyon Dayanımı

No

Parça Durumu

Active

Turn On Delay Time

13 ns

Drain To Source Breakdown Voltage

-30V

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Pin Sayısı

8

Number Of Elements

2

Element Configuration

Dual

Rise Time

13ns

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

1.5mm

Fet Type

2 P-Channel (Dual)

Terminal Formu

GULL WING

Uzunluk

5mm

Drain To Source Voltage Vdss

30V

Yayın Yılı

2011

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn)

Turn Off Delay Time

34 ns

Input Capacitance Ciss Max Vds

710pF @ 25V

Power Dissipation

2W

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate