AUIRF7313QTR

Teknik Özellikler

Input Capacitance Ciss Max Vds

755pF @ 25V

Power Dissipation

2.4W

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

8 Weeks

Gate Charge Qg Max Vgs

33nC @ 10V

Vgsth Max Id

3V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Montaj

Surface Mount

Fet Type

2 N-Channel (Dual)

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

30V

Yayın Yılı

2011

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

HEXFET®

Turn Off Delay Time

21 ns

Parça Durumu

Active

Turn On Delay Time

3.7 ns

Drain To Source Breakdown Voltage

30V

Transistor Application

SWITCHING

Pin Sayısı

8

Number Of Elements

2

Reference Standard

AEC-Q101

Rise Time

7.3ns

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

29m Ω @ 6.9A, 10V

Max Power Dissipation

2.4W

Avalanche Energy Rating Eas

450 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fall Time Typ

11 ns

Terminal Sayısı

8

Continuous Drain Current Id

6.9A

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

3V