AUIRF7103QTR

Teknik Özellikler

Rise Time

1.7ns

Parça Durumu

Not For New Designs

Drain To Source Breakdown Voltage

50V

Transistor Application

SWITCHING

Pin Sayısı

8

Number Of Elements

2

Continuous Drain Current Id

3A

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fall Time Typ

2.3 ns

Gate Charge Qg Max Vgs

15nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

26 Weeks

Genişlik

4mm

Montaj

Surface Mount

Power Dissipation

2.4W

Terminal Kaplaması

Matte Tin (Sn)

Yükseklik

1.5mm

Fet Type

2 N-Channel (Dual)

Additional Feature

HIGH RELIABILITY

Drain To Source Voltage Vdss

50V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

Automotive, AEC-Q101, HEXFET®

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

5.1 ns

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Threshold Voltage

1V

Rds On Max Id Vgs

130m Ω @ 3A, 10V

Max Power Dissipation

2.4W

Terminal Sayısı

8

Vgsth Max Id

3V @ 250μA

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

255pF @ 25V

Transistor Element Material

SILICON

Fet Feature

Standard