IRHYS597034CM

Teknik Özellikler

Channel Mode

Enhancement

Typical Rise Time Ns

65(Max)

Maximum Gate Threshold Voltage V

4

Parça Durumu

Active

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

75(Max)

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

25(Max)

Typical Fall Time Ns

50(Max)

Maximum Drain Source Voltage V

60

Eu Rohs

Not Compliant

Process Technology

R5

Minimum Operating Temperature C

-55

Maximum Idss Ua

10

Maximum Power Dissipation Mw

75000

Typical Gate Charge Vgs Nc

45(Max)@12V

Lead Shape

Through Hole

Pin Sayısı

3

Pcb Changed

3

Maximum Drain Source Resistance Mohm

87@12V

Eccn Us

Contact Export

Channel Type

P

Package Height

10.92(Max)

Automotive

No

Category

Power MOSFET

Package Length

10.66(Max)

Mounting

Through Hole

Ppap

No

Maximum Operating Temperature C

150

Supplier Package

TO-257AA

Typical Input Capacitance Vds Pf

1560@25V

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

100

Package Width

5.08(Max)

Maximum Continuous Drain Current A

20