IRHNS67264

Teknik Özellikler

Typical Rise Time Ns

150(Max)

Maximum Drain Source Resistance Mohm

40@12V

Channel Mode

Enhancement

Channel Type

N

Eccn Us

EAR99

Automotive

No

Configuration

Single

Category

Power MOSFET

Typical Turnoff Delay Time Ns

100(Max)

Typical Fall Time Ns

50(Max)

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

50(Max)

Maximum Drain Source Voltage V

250

Ppap

No

Minimum Operating Temperature C

-55

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

6912@25V

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

250000

Typical Gate Charge Vgs Nc

220(Max)@12V

Material

Si

Maximum Continuous Drain Current A

50