IRHNA9160

Teknik Özellikler

Configuration

Single

Reflow Temperaturemax S

NOT SPECIFIED

Turnon Timemax Ton

205 ns

JESD-609 Kodu

e0

Channel Mode

Enhancement

Case Connection

DRAIN

Ds Breakdown Voltagemin

100 V

Typical Rise Time Ns

170(Max)

Number Of Elements Per Chip

1

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Drainsource On Resistancemax

0.071 Ω

Part Life Cycle Code

Active

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

100

Transistor Element Material

SILICON

Yüzey Montaj

YES

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Polaritychannel Type

P-CHANNEL

Package Height

3.07(Max)

Automotive

No

Eccn Us

Contact Export

Number Of Elements

1

Üretici Parça No

IRHNA9160

Channel Type

P

Pcb Changed

3

Operating Temperaturemin

-55 °C

Package Length

13.46(Max)

Operating Temperaturemax

150 °C

Category

Power MOSFET

Package Shape

RECTANGULAR

Standard Package Name

SMD

Maximum Operating Temperature C

150

Supplier Package

SMD-2

Operating Mode

ENHANCEMENT MODE

Reference Standard

RH - 100K Rad(Si)

Maximum Gate Source Voltage V

±20

Risk Rank

5.15

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Hts

8541.29.00.95