IRHNA57163SE

Teknik Özellikler

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Number Of Elements Per Chip

1

Case Connection

DRAIN

Channel Mode

Enhancement

Typical Rise Time Ns

125(Max)

Ds Breakdown Voltagemin

130 V

JESD-609 Kodu

e0

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

Single

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Maximum Drain Source Voltage V

130

Yüzey Montaj

YES

Transistor Element Material

SILICON

Part Life Cycle Code

Active

Minimum Operating Temperature C

-55

Drainsource On Resistancemax

0.0135 Ω

Operating Temperaturemax

150 °C

Package Shape

RECTANGULAR

Category

Power MOSFET

Package Length

13.46(Max)

Pcb Changed

3

Number Of Elements

1

Eccn Us

Contact Export

Channel Type

N

Üretici Parça No

IRHNA57163SE

Package Height

3.07(Max)

Polaritychannel Type

N-CHANNEL

Automotive

No

Maximum Gate Source Voltage V

±20

Risk Rank

5.21

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Supplier Package

SMD-2

Standard Package Name

SMD

Typical Turnoff Delay Time Ns

80(Max)

Rohs Code

No

Pulsed Drain Currentmax Idm

300 A

Typical Turnon Delay Time Ns

35(Max)