IRFC3810B

Teknik Özellikler

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Tedarikçi Cihaz Paketi

Die

Kılıf / Paket

Die

Üretici Parça No

IRFC3810B

Supplier Package

Die

Seri

HEXFET®

Ürün Durumu

Obsolete

Category

Power MOSFET

Maximum Drain Source Voltage V

100

Paket

Bulk

Ppap

No

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

100 V

Risk Rank

5.84

Package Width

7.75

Eccn Us

EAR99

Rds On Max Id Vgs

9mOhm @ 170A, 10V

Polaritychannel Type

N-CHANNEL

Channel Type

N

Channel Mode

Enhancement

Current Continuous Drain Id25

170A

Maximum Operating Temperature C

175

Operating Temperaturemax

175 °C

Maximum Drain Source Resistance Mohm

9@10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Obsolete

Package Length

9.4

Rohs Code

No

Number Of Elements Per Chip

1

Technology

MOSFET (Metal Oxide)

Package Description

,

REACH Uyumluluk Kodu

unknown

Automotive

No

Package Height

0.38(Max)

Configuration

Single

Part Life Cycle Code

Transferred

Montaj Tipi

Surface Mount

Minimum Operating Temperature C

-55