IPG20N04S408BATMA1

Teknik Özellikler

Technology

MOSFET (Metal Oxide)

Seri

Automotive, AEC-Q101, OptiMOS™-T2

Vgsth Max Id

4V @ 30µA

Drain To Source Voltage Vdss

40V

Ürün Durumu

Active

Temel Ürün No

IPG20N

Tedarikçi Cihaz Paketi

PG-TDSON-8-10

Current Continuous Drain Id25

20A (Tc)

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

36nC @ 10V

Input Capacitance Ciss Max Vds

2940pF @ 25V

Paket

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Configuration

2 N-Channel (Dual)

Power Max

65W (Tc)

Montaj Tipi

Surface Mount, Wettable Flank

Rds On Max Id Vgs

7.6mOhm @ 17A, 10V