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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Channel Mode
- Enhancement
- Maximum Operating Temperature C
- 150
- Supplier Temperature Grade
- Military
- Maximum Pulsed Drain Current Tc25c A
- 25
- Package Height
- 4.54(Max)
- Maximum Idss Ua
- 25
- Typical Output Capacitance Pf
- 350
- Maximum Drain Source Voltage V
- 100
- Standard Package Name
- TO-205-AF
- Channel Type
- P
- Typical Turnon Delay Time Ns
- 60(Max)
- Maximum Gate Source Voltage V
- ±20
- Maximum Power Dissipation Mw
- 25000
- Typical Gate Charge10v Nc
- 34.8(Max)
- Typical Turnoff Delay Time Ns
- 140(Max)
- Lead Shape
- Through Hole
- Typical Gate To Drain Charge Nc
- 23.1(Max)
- Automotive
- No
- Supplier Package
- TO-39
- Maximum Continuous Drain Current A
- 6.5
- Pcb Changed
- 3
- Eccn Us
- EAR99
- Category
- Power MOSFET
- Typical Input Capacitance Vds Pf
- 800@25V
- Maximum Gate Threshold Voltage V
- 4
- Number Of Elements Per Chip
- 1
- Maximum Gate Source Leakage Current Na
- 100
- Typical Rise Time Ns
- 140(Max)
- Process Technology
- HEXFET
- Minimum Operating Temperature C
- -55
- Maximum Diode Forward Voltage V
- 4.3
- Typical Fall Time Ns
- 140(Max)
- Minimum Gate Threshold Voltage V
- 2
- Pin Sayısı
- 3
- Operating Junction Temperature C
- -55 to 150
- Eu Rohs
- Not Compliant
- Maximum Drain Source Resistance Mohm
- 320@10V
- Typical Gate Charge Vgs Nc
- 34.8(Max)@10V
- Typical Gate To Source Charge Nc
- 6.8(Max)
- Parça Durumu
- Active
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