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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maximum Drain Source Resistance Mohm
- 3000@10V
- Maximum Diode Forward Voltage V
- 1.2
- Maximum Drain Source Voltage V
- 60
- Channel Mode
- Enhancement
- Supplier Package
- SOT-23
- Maximum Junction Ambient Thermal Resistance On Pcb Cw
- 250
- Pcb Changed
- 3
- Operating Junction Temperature C
- -55 to 150
- Typical Gate Threshold Voltage V
- 2.1
- Typical Rise Time Ns
- 3.3
- Maximum Operating Temperature C
- 150
- Category
- Small Signal
- Typical Turnon Delay Time Ns
- 3
- Configuration
- Single
- Typical Reverse Transfer Capacitance Vds Pf
- 2@25V
- Package Height
- 1(Max)
- Pin Sayısı
- 3
- Typical Diode Forward Voltage V
- 0.96
- Package Width
- 1.3
- Eccn Us
- EAR99
- Lead Shape
- Gull-wing
- Typical Fall Time Ns
- 3.1
- Typical Reverse Recovery Time Ns
- 8.5
- Typical Reverse Recovery Charge Nc
- 2.4
- Minimum Gate Threshold Voltage V
- 1.5
- Typical Gate To Drain Charge Nc
- 0.2
- Typical Turnoff Delay Time Ns
- 5.5
- Number Of Elements Per Chip
- 1
- Typical Input Capacitance Vds Pf
- 13@25V
- Standard Package Name
- SOT
- Process Technology
- OptiMOS
- Mounting
- Surface Mount
- Maximum Gate Source Leakage Current Na
- 10
- Typical Gate Plateau Voltage V
- 4
- Maximum Positive Gate Source Voltage V
- 20
- Ppap
- No
- Maximum Gate Source Voltage V
- ±20
- Maximum Continuous Drain Current A
- 0.3
- Minimum Operating Temperature C
- -55
- Typical Gate Charge Vgs Nc
- 0.4@10V
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