DNS025-201

Teknik Özellikler

Seri

HEXFET®, StrongIRFET™

Vgsth Max Id

3.7V @ 150µA

Drain To Source Voltage Vdss

60 V

Power Dissipation Max

230W (Tc)

Gate Charge Qg Max Vgs

210 nC @ 10 V

Input Capacitance Ciss Max Vds

7020 pF @ 25 V

Kılıf / Paket

TO-262-3 Long Leads, I²Pak, TO-262AA

Ürün Durumu

Active

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Drive Voltage Max Rds On Min Rds On

6V, 10V

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Montaj Tipi

Through Hole

Tedarikçi Cihaz Paketi

TO-262

Vgs Max

±20V

Paket

Bulk

Current Continuous Drain Id25

173A (Tc)

Rds On Max Id Vgs

3.3mOhm @ 100A, 10V