G4S12020BM

Teknik Özellikler

Seri

*

Voltage Dc Reverse Vr Max

1200 V

Voltage Forward Vf Max If

1.6 V @ 10 A

Parça Durumu

Active

Kılıf / Paket

TO-247-3

Paket

Tape & Box (TB)

Diode Type

Silicon Carbide Schottky

Montaj Tipi

Through Hole

Reverse Recovery Time Trr

0 ns

Speed

No Recovery Time > 500mA (Io)

Current Reverse Leakage Vr

30 μA @ 1200 V

Tedarikçi Cihaz Paketi

TO-247AB

Current Average Rectified Io Per Diode

33.2A (DC)

Diode Configuration

1 Pair Common Cathode

Operating Temperature Junction

-55°C ~ 175°C

Ürün Durumu

Active