MBR50060CTR

Teknik Özellikler

Diode Element Material

SILICON

Parça Durumu

Active

Max Reverse Leakage Current

1μA

Max Reverse Voltage Dc

600V

Montaj

Chassis Mount, Through Hole

Maks. Çalışma Sıcaklığı

150°C

Montaj Tipi

Chassis Mount

HTS Kodu

8541.10.00.80

RoHS Durumu

RoHS Compliant

Max Surge Current

3.5kA

Gender

Male

Min. Çalışma Sıcaklığı

-40°C

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

PRODUCTION (Last Updated: 6 months ago)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Orientation

Right Angle

Terminal Formu

UNSPECIFIED

Kılıf / Paket

Twin Tower

Forward Current

500A

Fabrika Tedarik Süresi

6 Weeks

ECCN Kodu

EAR99

Number Of Elements

2

Peak Reverse Current

1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Applications

POWER

Pitch

4.2mm

Diode Configuration

1 Pair Common Anode

Current Reverse Leakage Vr

1mA @ 20V

Jesd30 Code

R-PUFM-X2

Average Rectified Current

500A

Number Of Phases

1

Diode Type

Schottky, Reverse Polarity

Yayın Yılı

2013

Terminal Pozisyonu

UPPER

Operating Temperature Junction

-55°C~150°C

Output Currentmax

250A

Ambalaj

Bulk

Element Configuration

Common Anode

Max Repetitive Reverse Voltage Vrrm

60V

Voltage Forward Vf Max If

800mV @ 250A