PSMN3R5-80PS,127

Teknik Özellikler

Maximum Power Dissipation Mw

338000

Radyasyon Dayanımı

No

Typical Rise Time Ns

43

Fall Time Typ

44 ns

Channel Type

N

Maximum Drain Source Resistance Mohm

3.5@10V

Pin Sayısı

3

Number Of Elements Per Chip

1

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Mounting

Through Hole

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Typical Turnon Delay Time Ns

41

Rds On Max Id Vgs

3.5m Ω @ 25A, 10V

Package Width

4.7(Max)

Maximum Operating Temperature C

175

Package Height

9.4(Max)

Fabrika Tedarik Süresi

12 Weeks

Typical Fall Time Ns

44

Current Continuous Drain Id25

120A Tc

Case Connection

DRAIN

Turn On Delay Time

41 ns

Typical Input Capacitance Vds Pf

9961@40V

Pin Sayısı

3

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Eccn Us

EAR99

Maximum Gate Source Voltage V

20

Configuration

Single

Channel Mode

Enhancement

Automotive

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Continuous Drain Current A

120

Ambalaj

Rail

Avalanche Energy Rating Eas

676 mJ

Gate To Source Voltage Vgs

20V