Freescale Semiconductor, Inc. (NXP Semiconductors)
PSMN059-150Y,115
MOSFETs Transistors Arrays
RoHS: Compliant
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Sevkiyat
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Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Lead Shape
- Gull-wing
- Typical Rise Time Ns
- 42
- Maximum Power Dissipation Mw
- 113000
- Typical Gate To Drain Charge Nc
- 9.1
- Typical Gate To Source Charge Nc
- 6.3
- Channel Type
- N
- Maximum Drain Source Resistance Mohm
- 59@10V
- Number Of Elements Per Chip
- 1
- Mounting
- Surface Mount
- Operating Junction Temperature C
- -55 to 150
- Typical Diode Forward Voltage V
- 0.9
- Maximum Operating Temperature C
- 150
- Package Height
- 1.1(Max)
- Typical Turnon Delay Time Ns
- 14.2
- Typical Reverse Recovery Time Ns
- 67
- Package Width
- 4.1(Max)
- Typical Fall Time Ns
- 11.1
- Typical Input Capacitance Vds Pf
- 1529@30V
- Maximum Idss Ua
- 1
- Typical Gate Plateau Voltage V
- 4.8
- Parça Durumu
- Active
- Svhc Exceeds Threshold
- Yes
- Eccn Us
- EAR99
- Maximum Gate Source Voltage V
- ±20
- Standard Package Name
- FPAK
- Configuration
- Single Triple Source
- Typical Reverse Transfer Capacitance Vds Pf
- 66@30V
- Channel Mode
- Enhancement
- Pin Sayısı
- 5
- Automotive
- No
- Maximum Continuous Drain Current A
- 43
- Ambalaj
- Tape and Reel
- Pcb Changed
- 4
- Typical Gate Charge10v Nc
- 27.9
- Minimum Gate Threshold Voltage V
- 2
- Typical Gate Charge Vgs Nc
- 27.9@10V
- Maximum Pulsed Drain Current Tc25c A
- 129
- Maximum Diode Forward Voltage V
- 1.2
- Supplier Package
- LFPAK
- Svhc
- Yes
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