FQB6N45

Teknik Özellikler

Drainsource On Resistancemax

1.1 Ω

Pulsed Drain Currentmax Idm

25 A

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Pin Sayısı

3

Ds Breakdown Voltagemin

450 V

Number Of Terminals

2

Part Package Code

D2PAK

Avalanche Energy Rating Eas

350 mJ

Jesd30 Code

R-PSSO-G2

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Yüzey Montaj

YES

Power Dissipationmax Abs

3.13 W

Part Life Cycle Code

Obsolete

Transistor Application

SWITCHING

Number Of Elements

1

Operating Temperaturemax

150 °C

Terminal Kaplaması

TIN LEAD

Drain Currentmax Id

6.2 A

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Package Description

SMALL OUTLINE, R-PSSO-G2

REACH Uyumluluk Kodu

unknown

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Jedec95 Code

TO-263AB

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Rohs Code

No

JESD-609 Kodu

e0

Polaritychannel Type

N-CHANNEL