FQB12N20

Teknik Özellikler

Drain Currentmax Id

11.6 A

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Part Life Cycle Code

Obsolete

Operating Temperaturemax

150 °C

Number Of Elements

1

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Case Connection

DRAIN

Package Description

D2PAK-3

REACH Uyumluluk Kodu

compliant

Operating Mode

ENHANCEMENT MODE

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Pin Sayısı

3

Drainsource On Resistancemax

0.28 Ω

Pulsed Drain Currentmax Idm

46.4 A

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Jesd30 Code

R-PSSO-G2

Avalanche Energy Rating Eas

210 mJ

Yüzey Montaj

YES

Power Dissipationmax Abs

90 W

Ds Breakdown Voltagemin

200 V

Number Of Terminals

2

Part Package Code

TO-263

Rohs Code

No

Polaritychannel Type

N-CHANNEL

JESD-609 Kodu

e0

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-263AB

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR