NDS9952A

Teknik Özellikler

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

320pF @ 10V

Pin Sayısı

8

Montaj Tipi

Surface Mount

Turn Off Delay Time

21 ns

Terminal Kaplaması

Tin (Sn)

Tedarikçi Cihaz Paketi

8-SOIC

Dual Supply Voltage

30V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Direnç

80MOhm

Fall Time Typ

8 ns

Akım Değeri

2.9A

Drain To Source Breakdown Voltage

30V

Ürün Durumu

Active

Gate To Source Voltage Vgs

20V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current Id

3.7A

Operating Mode

ENHANCEMENT MODE

Rise Time

21ns

Power Dissipation

2W

Nominal Vgs

1.7 V

Number Of Elements

2

Temel Ürün No

NDS995

Current Continuous Drain Id25

3.7A, 2.9A

Kurşunsuz Kodu

yes

Paket

Bulk

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Weight

230.4mg

Power Max

900mW

Vgsth Max Id

2.8V @ 250µA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Rds On Max Id Vgs

80mOhm @ 1A, 10V

Fet Feature

Logic Level Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Fet Type

N and P-Channel

ECCN Kodu

EAR99