HGT1S10N120BNS

Teknik Özellikler

Tedarikçi Cihaz Paketi

TO-263AB

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Parça Durumu

Not For New Designs

Fabrika Tedarik Süresi

44 Weeks

Kurşunsuz

Lead Free

Vceon Max Vge Ic

2.7V @ 15V, 10A

Power Dissipation

298W

Td Onoff25c

23ns/165ns

Gerilim

1.2kV

Paket

Bulk

Max Collector Current

35A

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 1 day ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Collector Emitter Voltage Vceo

1.2kV

Currentcollector Ic Max

35 A

Test Conditions

960V, 10A, 10Ohm, 15V

Akım

35A

Uzunluk

10.67mm

Montaj Tipi

Surface Mount

Turn On Time

32 ns

Jesd30 Code

R-PSSO-G2

Collectoremitter Breakdown Voltage

1.2kV

Current Collector Pulsed Icm

80 A

Case Connection

COLLECTOR

Polaritychannel Type

N-CHANNEL

ECCN Kodu

EAR99

Genişlik

9.65mm

Max Power Dissipation

312W

Number Of Elements

1

Switching Energy

320µJ (on), 800µJ (off)

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Weight

1.31247g

Montaj

Surface Mount, Through Hole

Voltage Collector Emitter Breakdown Max

1200 V

Continuous Collector Current

55A

Transistor Element Material

SILICON

Additional Feature

LOW CONDUCTION LOSS

Terminal Kaplaması

Tin (Sn)