FDMS3602S

Teknik Özellikler

Radyasyon Dayanımı

No

Avalanche Energy Rating Eas

50 mJ

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

31 ns

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Input Capacitance Ciss Max Vds

1680pF @ 13V

Current Continuous Drain Id25

15A, 26A

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

27nC @ 10V

Continuous Drain Current Id

26A

Kılıf / Paket

8-PowerTDFN

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Power Dissipation

2.5W

Max Power Dissipation

1W

Vgsth Max Id

3V @ 250µA

Nominal Vgs

1.8 V

Yayın Yılı

2006

Drain To Source Breakdown Voltage

25V

Reach Svhc

No SVHC

Drain To Source Voltage Vdss

25V

Seri

*

Weight

90mg

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Fall Time Typ

3.2 ns

Pulsed Drain Currentmax Idm

40A

Pin Sayısı

8

Jesd30 Code

R-PDSO-N6

Rds On Max Id Vgs

5.6mOhm @ 15A, 10V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Terminal Sayısı

6

Transistor Application

SWITCHING

Case Connection

DRAIN SOURCE

Fet Feature

Logic Level Gate

Drain Currentmax Abs Id

15A

Direnç

5.6MOhm

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes