FDMD8280

Teknik Özellikler

Gate Charge Qg Max Vgs

44nC @ 10V

Drain To Source Voltage Vdss

80V

Drain To Source Breakdown Voltage

80V

RoHS Durumu

ROHS3 Compliant

Rise Time

12ns

Input Capacitance Ciss Max Vds

3050pF @ 40V

Number Of Channels

2

Max Power Dissipation

1W

Tedarikçi Cihaz Paketi

12-Power3.3x5

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Vgsth Max Id

4V @ 250µA

Turn Off Delay Time

26 ns

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

12-PowerWDFN

Fet Type

2 N-Channel (Dual)

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

JESD-609 Kodu

e3

Paket

Bulk

Pin Sayısı

12

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

15 ns

Fabrika Tedarik Süresi

12 Weeks

Element Configuration

Dual

Seri

PowerTrench®

Power Max

1W

Continuous Drain Current Id

11A

Weight

82.3188mg

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Standard

Terminal Formu

NO LEAD

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Number Of Elements

2

Case Connection

DRAIN SOURCE

Parça Durumu

Active