GBI10B

Teknik Özellikler

Risk Rank

2.25

Eccn Us

EAR99

Peak Average Forward Current A

10

Mounting

Through Hole

Peak Forward Voltage V

1.1@5A

Military

No

Yüzey Montaj

NO

Reflow Temperaturemax S

NOT SPECIFIED

Additional Feature

UL RECOGNIZED

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Operating Temperaturemax

150 °C

Peak Nonrepetitive Forward Surge Current A

200

Peak Reverse Current Ua

5

Minimum Operating Temperature C

-50

Diode Type

BRIDGE RECTIFIER DIODE

Package Height

20

Peak Rms Reverse Voltage V

70

Package Style

IN-LINE

JESD-609 Kodu

e3

Rep Pk Reverse Voltagemax

100 V

Terminal Formu

THROUGH-HOLE

Bridge Type

Single Phase

Moisture Sensitivity Levels

1

Part Life Cycle Code

Active

Terminal Kaplaması

Matte Tin (Sn) - annealed

Package Length

30

Package Description

R-PSIP-T4

Peak Reverse Recovery Time Ns

1500(Typ)

RoHS Durumu

Yes with exemptions

Diode Element Material

SILICON

Parça Durumu

Active

Number Of Phases

1

Peak Reverse Repetitive Voltage V

100

Üretici Parça No

GBI10B

Supplier Temperature Grade

Commercial

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

HTS Kodu

8541.10.00.80

Package Width

4.6

Configuration

Single