ZXTDA1M832TA

Teknik Özellikler

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

15V 12V

Montaj Tipi

Surface Mount

Emitter Base Voltage Vebo

7.5V

Pin Sayısı

832

Collectoremitter Saturation Voltage

240mV

Element Configuration

Dual

Tepe Reflow Süresi (maks. sn)

40

Power Dissipation

3W

Case Connection

COLLECTOR

Current Collector Cutoff Max

25nA

Polarity

NPN, PNP

Gain Bandwidth Product

120MHz

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Continuous Collector Current

-4A

Yayın Yılı

2002

Terminal Sayısı

10

Collector Emitter Voltage Vceo

280mV

Tepe Reflow Sıcaklığı (°C)

260

Collector Base Voltage Vcbo

20V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Currentcollector Ic Max

4.5A 4A

Frequency Transition

120MHz 110MHz

Terminal Kaplaması

Matte Tin (Sn)

Yükseklik

1mm

Temel Parça No

ZXTDA1M832

Terminal Pozisyonu

QUAD

Genişlik

2mm

Max Breakdown Voltage

12V

Kılıf / Paket

8-VDFN Exposed Pad

Pin Sayısı

10

Max Collector Current

4A

Transition Frequency

120MHz

JESD-609 Kodu

e3

Frekans

120MHz

Max Power Dissipation

1W

Dc Current Gain Hfe Min Ic Vce

200 @ 3A 2V / 180 @ 2.5A 2V