ZXMP6A16DN8TC

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Jesd30 Code

R-PDSO-G8

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Montaj

Surface Mount

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Standard

Continuous Drain Current Id

2.9A

Drain To Source Voltage Vdss

60V

Power Max

1.25W

Max Power Dissipation

1.25W

Gate Charge Qg Max Vgs

24.2nC @ 10V

Qualification Status

Not Qualified

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1021pF @ 30V

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

17 Weeks

Yayın Yılı

2006

Vgsth Max Id

1V @ 250μA (Min)

Rds On Max Id Vgs

85m Ω @ 2.9A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

8

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Number Of Elements

2

Pulsed Drain Currentmax Idm

18.3A

Ds Breakdown Voltagemin

60V

Fet Type

2 P-Channel (Dual)

Terminal Kaplaması

Matte Tin (Sn)

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.085Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE