ZXMN6A09DN8TC

Teknik Özellikler

Transistor Element Material

SILICON

Turn On Delay Time

4.9 ns

Number Of Elements

2

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.045Ohm

Terminal Kaplaması

MATTE TIN

Pin Sayısı

8

Rds On Max Id Vgs

40m Ω @ 8.2A, 10V

Number Of Channels

2

Power Dissipation

1.25W

Fall Time Typ

5 ns

Tepe Reflow Süresi (maks. sn)

40

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pin Sayısı

8

Turn Off Delay Time

25.3 ns

JESD-609 Kodu

e3

Max Power Dissipation

1.25W

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1407pF @ 40V

Gate Charge Qg Max Vgs

24.2nC @ 5V

Gate To Source Voltage Vgs

20V

Qualification Status

Not Qualified

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

RoHS Durumu

RoHS Compliant

Ambalaj

Tape & Reel (TR)

Akım Değeri

4.4A

ECCN Kodu

EAR99

Vgsth Max Id

3V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Weight

73.992255mg

Montaj

Surface Mount

Parça Durumu

Obsolete

Drain Currentmax Abs Id

3.9A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

60V