ZXMN3A06DN8TA

Teknik Özellikler

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Akım Değeri

4.8A

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Max Power Dissipation

2.1W

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Dual Supply Voltage

30V

Fall Time Typ

9.4 ns

Turn On Delay Time

3 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

17 Weeks

Rise Time

6.4ns

Weight

73.992255mg

Current Continuous Drain Id25

4.9A

Rds On Max Id Vgs

35m Ω @ 9A, 10V

Threshold Voltage

1V

ECCN Kodu

EAR99

Drain Currentmax Abs Id

4.9A

Yayın Yılı

2006

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

260

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Power Dissipation

2.1W

Fet Feature

Logic Level Gate

Nominal Vgs

1 V

Continuous Drain Current Id

6.2A

Drain To Source Breakdown Voltage

30V

JESD-609 Kodu

e3

Vgsth Max Id

1V @ 250μA (Min)

Terminal Sayısı

8

Uzunluk

5mm

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

796pF @ 25V

Yükseklik

1.5mm