ZXMN2A04DN8TC

Teknik Özellikler

Rds On Max Id Vgs

25m Ω @ 5.9A, 4.5V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

7.7A

Yayın Yılı

2012

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

no

RoHS Durumu

RoHS Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

50.5 ns

Fet Feature

Logic Level Gate

Power Dissipation

1.25W

Terminal Formu

GULL WING

Continuous Drain Current Id

5.9A

Montaj

Surface Mount

Additional Feature

LOW THRESHOLD

Drain To Source Breakdown Voltage

20V

Number Of Channels

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

8

Vgsth Max Id

700mV @ 250μA (Min)

Fet Type

2 N-Channel (Dual)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Akım Değeri

6A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

8

Transistor Application

SWITCHING

Max Power Dissipation

1.25W

Input Capacitance Ciss Max Vds

1880pF @ 10V

Kurşunsuz

Lead Free

Voltage Rated Dc

20V

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

Qualification Status

Not Qualified

Power Max

1.8W

Fall Time Typ

14.8 ns

Turn On Delay Time

7.9 ns