ZXMN2A04DN8TA

Teknik Özellikler

Turn On Delay Time

7.9 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

17 Weeks

Rise Time

14.8ns

Weight

73.992255mg

Current Continuous Drain Id25

5.9A

Fall Time Typ

30.6 ns

Transistor Element Material

SILICON

Max Power Dissipation

2.1W

Transistor Application

SWITCHING

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Akım Değeri

6A

Drain To Source Breakdown Voltage

20V

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Power Dissipation

2.1W

Additional Feature

LOW THRESHOLD

Continuous Drain Current Id

7.7A

Yayın Yılı

2012

Drain Currentmax Abs Id

5.9A

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

25m Ω @ 5.9A, 4.5V

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

22.1nC @ 5V

Pin Sayısı

8

Number Of Elements

2

Power Max

1.8W

Terminal Sayısı

8

Uzunluk

5mm

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1880pF @ 10V