ZXMD63N03XTC

Teknik Özellikler

Terminal Sayısı

8

Transistor Element Material

SILICON

Uzunluk

3.1mm

Operating Mode

ENHANCEMENT MODE

Max Power Dissipation

870mW

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

290pF @ 25V

Yükseklik

950μm

Voltage Rated Dc

30V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Genişlik

3.1mm

Kurşunsuz

Lead Free

Vgsth Max Id

1V @ 250μA (Min)

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Fet Type

2 N-Channel (Dual)

Akım Değeri

2.4A

Turn On Delay Time

2.5 ns

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

8nC @ 10V

Rise Time

4.1ns

Weight

139.989945mg

Pin Sayısı

8

Number Of Elements

2

Reference Standard

AEC-Q101

REACH Uyumluluk Kodu

unknown

Power Max

1.04W

Fall Time Typ

4.1 ns

Yayın Yılı

2006

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

RoHS Durumu

RoHS Compliant

Drainsource On Resistancemax

0.135Ohm

Turn Off Delay Time

9.6 ns

Rds On Max Id Vgs

135m Ω @ 1.7A, 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

30V

Number Of Channels

2

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)