ZXMD63N02XTC

Teknik Özellikler

Fet Feature

Logic Level Gate

Power Dissipation

870mW

Continuous Drain Current Id

2.4A

Drain To Source Breakdown Voltage

20V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Rds On Max Id Vgs

130m Ω @ 1.7A, 4.5V

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.13Ohm

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Fall Time Typ

8.1 ns

Parça Durumu

Obsolete

Turn On Delay Time

3.4 ns

Current Continuous Drain Id25

2.5A

Weight

139.989945mg

Jesd30 Code

S-PDSO-G8

Rise Time

8.1ns

Akım Değeri

2.4A

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Fet Type

2 N-Channel (Dual)

Transistor Application

SWITCHING

Max Power Dissipation

870mW

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Montaj

Surface Mount

Number Of Channels

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jedec95 Code

MO-187AA

Turn Off Delay Time

13.5 ns

Power Max

1.04W

Pin Sayısı

8