ZXMC4A16DN8TC

Teknik Özellikler

Parça Durumu

Obsolete

Jesd30 Code

R-PDSO-G8

Gate Charge Qg Max Vgs

17nC @ 10V

Number Of Elements

2

Pin Sayısı

8

Current Continuous Drain Id25

5.2A Ta 4.7A Ta

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Max

2.1W

Ds Breakdown Voltagemin

40V

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

8

Transistor Element Material

SILICON

Terminal Kaplaması

Matte Tin (Sn)

Drain To Source Voltage Vdss

40V

Max Power Dissipation

1.25W

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

770pF @ 40V 1000pF @ 20V

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

1V @ 250mA (Min)

Pulsed Drain Currentmax Idm

24A

Fet Type

N and P-Channel Complementary

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Continuous Drain Current Id

3.6A

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Yayın Yılı

2012

Drain Currentmax Abs Id

4A

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.05Ohm

RoHS Durumu

RoHS Compliant

Tepe Reflow Sıcaklığı (°C)

260