MMDT5451Q-7

Teknik Özellikler

Power Max

200mW

Configuration

Dual

Tedarikçi Cihaz Paketi

SOT-363

Vce Saturation Max Ib Ic

200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA

Collectoremitter Saturation Voltage

200 mV, 500 mV

Transistor Type

NPN, PNP

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Currentcollector Ic Max

200mA

Gain Bandwidth Product Ft

300 MHz

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA, 5V / 60 @ 10mA, 5V

Dc Collectorbase Gain Hfe Min

80

Collector Base Voltage Vcbo

180 V, 160 V

Transistor Polarity

NPN, PNP

Ürün Durumu

Active

Pd Power Dissipation

320 mW

Voltage Collector Emitter Breakdown Max

160V, 150V

Current Collector Cutoff Max

50nA (ICBO)

Emitter Base Voltage Vebo

6 V

Collector Emitter Voltage Vceo Max

160 V, 150 V

Minimum Operating Temperature

- 55 C

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj Tipi

Surface Mount

Maximum Dc Collector Current

200 mA

Montaj Stili

SMD/SMT

Fabrika Paket Adedi

3000

Paket

Tape & Reel (TR)

Maks. Çalışma Sıcaklığı

+ 150 C

Seri

Automotive, AEC-Q101

Frequency Transition

300MHz