MJD31CQ-13

Teknik Özellikler

Terminal Sayısı

2

Tepe Reflow Süresi (maks. sn)

40

Montaj

Surface Mount

Vce Saturation Max Ib Ic

1.2V @ 375mA, 3A

Tepe Reflow Sıcaklığı (°C)

260

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Yayın Yılı

2005

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE

Collector Emitter Voltage Vceo

1.2V

Dc Current Gain Hfe Min Ic Vce

10 @ 3A 4V

Terminal Pozisyonu

SINGLE

Case Connection

COLLECTOR

Frequency Transition

3MHz

Additional Feature

HIGH RELIABILITY

Fabrika Tedarik Süresi

13 Weeks

Max Power Dissipation

15W

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Collectoremitter Breakdown Voltage

100V

Power Max

15W

Transition Frequency

3MHz

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Current Collector Cutoff Max

1μA

Reference Standard

AEC-Q101

RoHS Durumu

ROHS3 Compliant

Transistor Type

NPN

Polaritychannel Type

NPN

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSSO-G2

Max Breakdown Voltage

100V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Collector Current

3A