MBRD835L-T

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

2

Diode Element Material

SILICON

Current Reverse Leakage Vr

1.4mA @ 35V

Diode Type

Schottky

JESD-609 Kodu

e3

Additional Feature

LOW POWER LOSS, FREE WHEELING DIODE

Tepe Reflow Süresi (maks. sn)

40

Applications

EFFICIENCY

Parça Durumu

Obsolete

Terminal Pozisyonu

SINGLE

Operating Temperature Junction

-65°C~125°C

Kurşunsuz

Lead Free

Number Of Phases

1

Terminal Formu

GULL WING

Temel Parça No

MBRD835

Output Current

8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Akım Değeri

8A

RoHS Durumu

RoHS Compliant

Average Rectified Current

8A

Jesd30 Code

R-PSSO-G2

Voltage Forward Vf Max If

510mV @ 8A

Yayın Yılı

2002

Nonrep Pk Forward Currentmax

75A

Max Reverse Voltage Dc

35V

Pin Sayısı

3

Number Of Elements

1

Polarity

Standard

Kapasitans

600pF

HTS Kodu

8541.10.00.80

Montaj

Surface Mount

ECCN Kodu

EAR99

Voltage Rated Dc

35V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Tepe Reflow Sıcaklığı (°C)

260

Operating Temperature Max

150°C

Case Connection

CATHODE