MBR20100CS2TR-E1

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2015

Diode Element Material

SILICON

Jesd30 Code

R-PSSO-G2

Yüzey Montaj

YES

Nonrep Pk Forward Currentmax

150A

Voltage Dc Reverse Vr Max

100V

Fabrika Tedarik Süresi

5 Weeks

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number Of Elements

2

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Parça Durumu

Obsolete

Terminal Sayısı

2

Output Currentmax

10A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Terminal Formu

GULL WING

HTS Kodu

8541.10.00.80

Diode Configuration

1 Pair Common Cathode

Current Reverse Leakage Vr

100μA @ 100V

Operating Temperature Max

150°C

Number Of Phases

1

RoHS Durumu

ROHS3 Compliant

Additional Feature

LOW NOISE

Reverse Currentmax

100μA

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Operating Temperature Junction

-65°C~150°C

Applications

HIGH VOLTAGE POWER

REACH Uyumluluk Kodu

not_compliant

Rep Pk Reverse Voltagemax

100V

Voltage Forward Vf Max If

850mV @ 10A

Diode Type

Schottky

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Average Rectified Io

10A