MBR10100CD-E1

Teknik Özellikler

Yayın Yılı

2015

Montaj Tipi

Surface Mount

Nonrep Pk Forward Currentmax

100A

Jesd30 Code

R-PSSO-G2

Additional Feature

LOW NOISE

Diode Element Material

SILICON

Applications

HIGH VOLTAGE POWER

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Operating Temperature Junction

150°C Max

Operating Temperature Max

150°C

Diode Type

Schottky

Voltage Dc Reverse Vr Max

100V

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rep Pk Reverse Voltagemax

100V

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Parça Durumu

Obsolete

Voltage Forward Vf Max If

850mV @ 5A

Fabrika Tedarik Süresi

5 Weeks

Current Reverse Leakage Vr

100μA @ 100V

Output Currentmax

5A

Terminal Formu

GULL WING

Yüzey Montaj

YES

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tube

Number Of Phases

1

Current Average Rectified Io

5A

Terminal Sayısı

2

Diode Configuration

1 Pair Common Cathode

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Reverse Currentmax

100μA

HTS Kodu

8541.10.00.80