HTMN5130SSD-13

Teknik Özellikler

Drain To Source Voltage Vdss

55V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

21 Weeks

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

55V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Vgsth Max Id

3V @ 250μA

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

8.9nC @ 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current Id

2.6A

Transistor Application

SWITCHING

Number Of Elements

2

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Max Power Dissipation

1.7W

Turn On Delay Time

3 ns

Additional Feature

HIGH RELIABILITY

Terminal Sayısı

8

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.13Ohm

Montaj Tipi

Surface Mount

Fet Feature

Standard

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Reference Standard

AEC-Q101

Fall Time Typ

6.1 ns

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

8A

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Turn Off Delay Time

13.5 ns

JESD-609 Kodu

e3

Rise Time

2.5ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

218.7pF @ 25V

Rds On Max Id Vgs

130m Ω @ 3A, 10V