Adet bazlı fiyat
- 1+ adet$0.80
- 10+ adet$0.76
- 100+ adet$0.71
- 500+ adet$0.67
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Weight
- 95.991485mg
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PDSO-F3
- Current Collector Cutoff Max
- 20nA ICBO
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- DXT2013P5
- Max Breakdown Voltage
- 100V
- Max Power Dissipation
- 3.2W
- Terminal Kaplaması
- Matte Tin (Sn)
- Collector Base Voltage Vcbo
- 140V
- Yayın Yılı
- 2012
- Transistor Type
- PNP
- Radyasyon Dayanımı
- No
- Terminal Formu
- FLAT
- Max Collector Current
- 5A
- Pin Sayısı
- 4
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Polaritychannel Type
- PNP
- Montaj
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- -7V
- Kılıf / Paket
- PowerDI™ 5
- Power Dissipation
- 3.2W
- Transistor Application
- SWITCHING
- Continuous Collector Current
- -5A
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 1A 1V
- Reach Svhc
- No SVHC
- Collector Emitter Voltage Vceo
- 100V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 15 Weeks
- Transition Frequency
- 125MHz
- Case Connection
- COLLECTOR
- Collectoremitter Breakdown Voltage
- 100V
- Pin Sayısı
- 5
- Element Configuration
- Single
- Gain Bandwidth Product
- 125MHz
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