Adet bazlı fiyat
- 1+ adet$0.14
- 10+ adet$0.13
- 100+ adet$0.12
- 500+ adet$0.12
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2014
- JESD-609 Kodu
- e3
- Vce Saturation Max Ib Ic
- 400mV @ 250mA, 1A
- Collectoremitter Saturation Voltage
- 400mV
- Gain Bandwidth Product
- 4MHz
- Terminal Pozisyonu
- DUAL
- Element Configuration
- Single
- Collectoremitter Breakdown Voltage
- 450V
- Terminal Kaplaması
- Matte Tin (Sn)
- Case Connection
- COLLECTOR
- Transition Frequency
- 4MHz
- Collector Emitter Voltage Vceo
- 400mV
- Fabrika Tedarik Süresi
- 15 Weeks
- Number Of Elements
- 1
- Max Power Dissipation
- 700mW
- Transistor Application
- SWITCHING
- Continuous Collector Current
- 1.3A
- Max Breakdown Voltage
- 450V
- Dc Current Gain Hfe Min Ic Vce
- 16 @ 500mA 2V
- Kılıf / Paket
- TO-261-4, TO-261AA
- Emitter Base Voltage Vebo
- 9V
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Turn On Timemax Ton
- 3700ns
- Jesd30 Code
- R-PDSO-G4
- Polaritychannel Type
- NPN
- Weight
- 7.994566mg
- Parça Durumu
- Active
- Terminal Sayısı
- 4
- Terminal Formu
- GULL WING
- Max Collector Current
- 1.3A
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
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