DSS5160FDB-7

Teknik Özellikler

Collector Emitter Voltage Vceo

550mV

Frequency Transition

65MHz

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2016

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Transistor Type

2 PNP (Dual)

Terminal Formu

NO LEAD

Vce Saturation Max Ib Ic

550mV @ 50mA, 1A

Case Connection

COLLECTOR

Transition Frequency

65MHz

JESD-609 Kodu

e4

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SEPARATE, 2 ELEMENTS

Kılıf / Paket

6-UDFN Exposed Pad

Max Breakdown Voltage

60V

Collectoremitter Breakdown Voltage

60V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

6

Dc Current Gain Hfe Min Ic Vce

120 @ 500mA 2V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Max Power Dissipation

405mW

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Current Collector Cutoff Max

100nA ICBO

Power Max

405mW

Polaritychannel Type

PNP

Fabrika Tedarik Süresi

16 Weeks

Jesd30 Code

S-PDSO-N6

Number Of Elements

2

Parça Durumu

Active

Max Collector Current

1A