DMP3036SSD-13

Teknik Özellikler

Vgsth Max Id

3V @ 250μA

RoHS Durumu

ROHS3 Compliant

Fet Feature

Logic Level Gate

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.02Ohm

Gate Charge Qg Max Vgs

16.5nC @ 10V

Max Power Dissipation

1.2W

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

23 Weeks

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Number Of Elements

2

Power Max

1.2W

Yayın Yılı

2014

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

20m Ω @ 9A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1931pF @ 15V

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

10.6A

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

30V