DMP2200UDW-7

Teknik Özellikler

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

88ns

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

1.2V @ 250μA

Terminal Sayısı

6

Yayın Yılı

2015

Operating Mode

DUAL GATE, ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Contact Plating

Tin

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Number Of Elements

2

Fabrika Tedarik Süresi

15 Weeks

Turn On Delay Time

9.8 ns

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

2.1nC @ 4.5V

Max Power Dissipation

450mW

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Turn Off Delay Time

24.4 ns

Input Capacitance Ciss Max Vds

184pF @ 10V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

260m Ω @ 880mA, 4.5V

Tepe Reflow Süresi (maks. sn)

30

Fet Type

2 P-Channel (Dual)

Drain Currentmax Abs Id

0.9A

Continuous Drain Current Id

900mA

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

20V

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

45 ns

Pin Sayısı

6

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj

Surface Mount

Gate To Source Voltage Vgs

8V

Drain To Source Voltage Vdss

20V