DMP2200UDW-13

Teknik Özellikler

Gate Charge Qg Max Vgs

2.1nC @ 4.5V

Max Power Dissipation

450mW

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

15 Weeks

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

450mW

Number Of Elements

2

Transistor Element Material

SILICON

Yayın Yılı

2015

Terminal Sayısı

6

Transistor Application

SWITCHING

Operating Mode

DUAL GATE, ENHANCEMENT MODE

Terminal Formu

GULL WING

Jesd30 Code

R-PDSO-G6

Vgsth Max Id

1.2V @ 250μA

RoHS Durumu

ROHS3 Compliant

Fet Feature

Standard

Drainsource On Resistancemax

0.26Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Drain To Source Voltage Vdss

20V

Montaj

Surface Mount

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

900mA

ECCN Kodu

EAR99

Drain Currentmax Abs Id

0.9A

Ds Breakdown Voltagemin

20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

2 P-Channel (Dual)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Rds On Max Id Vgs

260m Ω @ 880mA, 4.5V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

184pF @ 10V