DMP2160UFDB-7

Teknik Özellikler

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

750μm

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Genişlik

2mm

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2012

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

13A

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Fet Type

2 P-Channel (Dual)

JESD-609 Kodu

e4

Turn Off Delay Time

55.34 ns

Input Capacitance Ciss Max Vds

536pF @ 10V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

12.09 ns

Gate To Source Voltage Vgs

12V

ECCN Kodu

EAR99

Continuous Drain Current Id

3.8A

Uzunluk

2mm

Vgsth Max Id

900mV @ 250μA

Fet Feature

Logic Level Gate

Rise Time

12.09ns

Drainsource On Resistancemax

0.07Ohm

Fabrika Tedarik Süresi

6 Weeks

Turn On Delay Time

11.51 ns

Gate Charge Qg Max Vgs

6.5nC @ 4.5V

Reach Svhc

No SVHC

Max Power Dissipation

1.4W

Montaj Tipi

Surface Mount

Terminal Sayısı

6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

40

Power Dissipation

1.4W

Additional Feature

HIGH RELIABILITY