DMP2100UCB9-7

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

7ns

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Drainsource On Resistancemax

0.0175Ohm

Fet Feature

Logic Level Gate

Terminal Pozisyonu

BOTTOM

Vgsth Max Id

900mV @ 250μA

Transistor Element Material

SILICON

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

BALL

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Yayın Yılı

2014

Terminal Sayısı

9

Reach Svhc

No SVHC

Max Power Dissipation

800mW

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

4.2nC @ 4.5V

Turn On Delay Time

8.5 ns

Ambalaj

Cut Tape (CT)

Fabrika Tedarik Süresi

7 Weeks

Rds On Max Id Vgs

100m Ω @ 1A, 4.5V

Drain To Source Breakdown Voltage

-20V

Reference Standard

AEC-Q101

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

47 ns

Additional Feature

HIGH RELIABILITY

Input Capacitance Ciss Max Vds

310pF @ 10V

JESD-609 Kodu

e1

Number Of Channels

2

Tepe Reflow Süresi (maks. sn)

40

Fet Type

2 P-Channel (Dual) Common Source

Tepe Reflow Sıcaklığı (°C)

260

Feedback Capmax Crss

55 pF

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

3A

Continuous Drain Current Id

3A