DMN63D8LV-7

Teknik Özellikler

Power Dissipation

450mW

Max Power Dissipation

450mW

Çalışma Sıcaklığı

-55°C~150°C TJ

Reference Standard

AEC-Q101

Continuous Drain Current Id

260mA

Genişlik

1.25mm

Gate Charge Qg Max Vgs

0.87nC @ 10V

Kılıf / Paket

SOT-563, SOT-666

Ambalaj

Cut Tape (CT)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

3.3 ns

Input Capacitance Ciss Max Vds

22pF @ 25V

Reach Svhc

No SVHC

Rise Time

3.2ns

Fall Time Typ

6.3 ns

JESD-609 Kodu

e3

Terminal Formu

FLAT

Vgsth Max Id

1.5V @ 250μA

Pin Sayısı

6

Temel Parça No

DMN63D8L

Fabrika Tedarik Süresi

16 Weeks

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Breakdown Voltage

30V

Drain To Source Voltage Vdss

30V

Fet Type

2 N-Channel (Dual)

RoHS Durumu

ROHS3 Compliant

Uzunluk

1.7mm

Drainsource On Resistancemax

4.5Ohm

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Element Configuration

Dual

Yükseklik

600μm

Fet Technology

METAL-OXIDE SEMICONDUCTOR